半导体器件基础

本书不仅包括了量子力学、半导体物理和半导体器件(包括二极管、场效应晶体管、双极晶体管和光电器件)的基本工作原理等内容，还写进了现代半导体器件的最新进展以及器件的实际应用。例如：对于显著影响现代小尺寸器件电学特性的二级效应进行了分析和公式推导，给出了描述小尺寸器件特性的最新的数学表达式；考虑到异质结在场效应器件、双极器件和光电器件中的应用日益增加，书中对半导体异质结作了着重介绍；由于半导体制造设备和工艺技术的提高， "能带工程"得以实现，随之带来了器件性能的提高，所以本书在重点介绍硅材料和硅器件的基础上，还介绍了化合物半导体器件、合金器件(如SiGe， A1GaAs)和异质结器件；本书还利用电路分析程序SPICE对器件的I-V特性进行了模拟，对简单电路进行了稳态和瞬态分析。 本书不仅是一本很好的教科书，也很适合作为微电子和相关领域的工程技术人员的参考书。作者Betty Lise Andersonlg士是美国俄亥俄州立大学工学院的电机工程教授，讲授多门本科生和研究生的课程。曾经在工业界工作过九年，有丰富的研究经验，目前正在从事用于通讯、雷达和信息处理的光子学器件研究。因此，与实际器件应用紧密结合也是本书的一个特色。

暂缺《半导体器件基础》作者简介

CONTENTS.
Prefacexiii
PART1
Materials1
Chapter1
ElectronEnergyandStatesinSemiconductors3
1.1IntroductionandPreview3
1.2ABriefHistory4
1.3ApplicationtotheHydrogenAtom5
1.3.1TheBohrModelfortheHydrogenAtom5
1.3.2ApplicationtoMolecules:Covalent
Bonding11
1.3.3QuantumNumbersandthePauliExclusionPrinciple13
1.3.4CovalentBondinginCrystallineSolids14
1.4Wave-ParticleDuality20
1.5TheWaveFunction22
1.5.1ProbabilityandtheWaveFunction22
1.6TheElectronWaveFunction23
1.6.1TheFreeElectroninOneDimension23
1.6.2ThedeBroglieRelationship25
*1.6.3TheFreeElectroninThreeDimensions26
1.6.4TheQuasi-FreeElectronModel27
1.6.5ReflectionandTunneling32
1.7AFirstLookatOpticalEmissionandAbsorption33
1.8CrystalStructures,Planes,andDirections39
1.9Summary41
1.10ReadingList42
1.11References42
1.12ReviewQuestions42
1.13Problems43
Chapter2
HomogeneousSemiconductors48
2.1IntroductionandPreview48
2.2Pseudo-ClassicalMechanicsforElectronsinCrystals49
2.2.1One-DimensionalCrystals49
*2.2.2Three-DimensionalCrystals55
2.3ConductionBandStructure56
2.4ValenceBandStructure58
2.5IntrinsicSemiconductors59
2.6ExtrinsicSemiconductors62
2.6.1Donors62
2.6.2Acceptors66
2.7TheConceptofHoles67
2.7.1HoleCharge67
*2.7.2EffectiveMassofHoles69
2.8Density-of-StatesFunctionsforElectronsinBands71
2.8.1DensityofStatesandDensity-of-StatesEffectiveMass71
2.9Fermi-DiracStatistics73
2.9.1Fermi-DiracStatisticsforElectronsandHolesinBands73
2.10ElectronandHoleDistributionswithEnergy76
*2.11TemperatureDependenceofCarrier
ConcentrationsinNondegenerateSemiconductors89
*2.11.1CarrierConcentrationsatHighTemperatures89
*2.11.2CarrierConcentrationsatLowTemperatures(CarrierFreeze-out)93
2.12DegenerateSemiconductors94
2.12.1Impurity-InducedBand-GapNarrowing94
2.12.2ApparentBand-GapNarrowing97
2.12.3CarrierConcentrationsinDegenerateSemiconductors99
2.13Summary100
2.13.1NondegenerateSemiconductors101
2.13.2DegenerateSemiconductors102
2.14ReadingList103
2.15References103
2.16ReviewQuestions103
2.17Problems104
Chapter3
CurrentFlowinHomogeneousSemiconductors111
3.1Introduction111
3.2DriftCurrent111
3.3CarrierMobility115
3.3.1CarrierScattering119
3.3.2ScatteringMobility121
3.3.3ImpurityBandMobility122
3.3.4TemperatureDependenceofMobility124
3.3.5High-FieldEffects124
3.4DiffusionCurrent128
3.5CarrierGenerationandRecombination131
3.5.1Band-to-BandGenerationandRecombination133
3.5.2Two-StepProcesses133
3.6OpticalProcessesinSemiconductors133
*3.6.1Absorption133
*3.6.2Emission137
viContents
3.7ContinuityEquations139
3.8MinorityCarrierLifetime142
3.8.1RiseTime144
3.8.2FallTime144
3.9MinorityCarrierDiffusionLengths147
3.10QuasiFermiLevels149
3.11Summary152
3.12ReadingList154
3.13References154
3.14ReviewQuestions154
3.15Problems155
Chapter4
Nonhomogeneous
Semiconductors159
4.1ConstancyoftheFermiLevelatEquilibrium159
4.2GradedDoping161
4.2.1TheEinsteinRelation165
4.2.2AGraded-BaseTransistor166
*4.3NonuniformComposition170
*4.4GradedDopingandGradedCompositionCombined173
4.5Summary175
4.6ReadingList175
4.7References175
4.8ReviewQuestions176
4.9Problems176
SupplementtoPartMaterials179
Supplement1A
IntroductiontoQuantumMechanics180
S1A.1Introduction180
S1A.2TheWaveFunction180
S1A.3ProbabilityandtheWaveFunction182
*S1A.3.1ParticleinaOne-DimensionalPotentialWell182
Contentsvii
S1A.4Schroedinger’sEquation184
S1A.5ApplyingSchroedinger’sEquationtoElectrons185
S1A.6SomeResultsfromQuantumMechanics187
S1A.6.1TheFreeElectron187
S1A.6.2TheQuasi-FreeElectron188
S1A.6.3ThePotentialEnergyWell189
S1A.6.4TheInfinitePotentialWellinOneDimension191
S1A.6.5ReflectionandTransmissionataFinitePotentialBarrier194
S1A.6.6Tunneling196
S1A.6.7TheFinitePotentialWell203
S1A.6.8TheHydrogenAtomRevisited205
S1A.6.9TheUncertaintyPrinciple206
S1A.7Summary210
S1A.8ReviewQuestions211
S1A.9Problems211
Supplement1B
AdditionalTopicsonMaterials215
S1B.1MeasurementofCarrierConcentrationandMobility215
S1B.1.1ResistivityMeasurement215
S1B.1.2HallEffect216
S1B.2Fermi-DiracStatisticsforElectronsinBoundStates219
S1B.3CarrierFreeze-outinSemiconductors222
S1B.4Phonons223
*S1B.4.1CarrierScatteringbyPhonons228
S1B.4.2IndirectElectronTransitions230
S1B.5Summary232
S1B.6ReadingList232
S1B.7References232
S1B.8ReviewQuestions232
S1B.9Problems233
PART2
Diodes235
Chapter5
PrototypepnHomojunctions239
5.1Introduction239
5.2PrototypepnJunctions(Qualitative)241
5.2.1EnergyBandDiagramsofPrototypeJunctions241
5.2.2DescriptionofCurrentFlowinapnHomojunction248
5.3PrototypepnHomojunctions(Quantitative)253
5.3.1EnergyBandDiagramatEquilibrium(StepJunction)253
5.3.2EnergyBandDiagramwithAppliedVoltage256
5.3.3Current-VoltageCharacteristicsofpnHomojunctions263
5.3.4Reverse-BiasBreakdown284
5.4Small-SignalImpedanceofPrototypeHomojunctions286
5.4.1JunctionResistance286
5.4.2JunctionCapacitance288
5.4.3Stored-ChargeCapacitance290
5.5TransientEffects294
5.5.1Turn-offTransient294
5.5.2Turn-onTransient297
5.6EffectsofTemperature301
5.7Summary301
5.7.1Built-inVoltage302
5.7.2JunctionWidth302
5.7.3JunctionCurrent303
5.7.4JunctionBreakdown304
5.7.5Capacitance305
5.7.6TransientEffects305
5.8ReadingList305
5.9ReviewQuestions306
5.10Problems306
viiiContents
Chapter6
AdditionalConsiderations
forDiodes311
6.1Introduction311
6.2NonstepHomojunctions311
*6.2.1LinearlyGradedJunctions314
6.2.2HyperabruptJunctions317
6.3SemiconductorHeterojunctions317
6.3.1TheEnergyBandDiagramsofSemiconductor-SemiconductorHeterojunctions317
6.3.2EffectsofInterfaceStates327
*6.3.3EffectsofLatticeMismatchonHeterojunctions329
6.4Metal-SemiconductorJunctions331
6.4.1IdealMetal-SemiconductorJunctions(ElectronAffinityModel)331
6.4.2InfluenceofInterface-InducedDipoles331
6.4.3TheCurrent-VoltageCharacteristicsofMetal-SemiconductorJunctions334
6.4.4Ohmic(Low-Resistance)Contacts337
6.4.5I-VaCharacteristicsofHeterojunction
Diodes339
*6.5CapacitanceinNonidealJunctionsandHeterojunctions339
6.6Summary340
6.7ReadingList340
6.8References340
6.9ReviewQuestions341
6.10Problems341
SupplementtoPart2
Diodes346
S2.1Introduction346
S2.2DielectricRelaxationTime346
S2.2.1Case1:DielectricRelaxationTimeforInjectionofMajorityCarriers347..
S2.2.2Case2:InjectionofMinorityCarriers349
S2.3JunctionCapacitance350
S2.3.1JunctionCapacitanceinaPrototype(Step)Junction350
S2.3.2JunctionCapacitanceinaNonuniformlyDopedJunction352
S2.3.3Varactors353
S2.3.4Stored-ChargeCapacitanceofShort-BaseDiodes354
S2.4Second-OrderEffectsinSchottkyDiodes356
S2.4.1TunnelingThroughSchottkyBarriers357
S2.4.2BarrierLoweringinSchottkyDiodesDuetotheImageEffect359
S2.5SPICEModelforDiodes361
S2.5.1TheUseofSPICEasaCurveTracer362
S2.5.2TransientAnalysis365
S2.6Summary368
S2.7ReadingList368
S2.8References369
S2.9Problems369
PART3
Field-EffectTransistors373
Chapter7
TheMOSFET385
7.1Introduction385
7.2MOSFETs(Qualitative)385
7.2.1IntroductiontoMOSCapacitors386
7.2.2MOSFETsatEquilibrium(Qualitative)390
7.2.3MOSFETsNotatEquilibrium(Qualitative)392
7.3MOSFETs(Quantitative)403
7.3.1Long-ChannelMOSFETModelwithConstantMobility404
7.3.2MoreRealisticLong-ChannelModels:EffectofFieldsontheMobility417
*7.3.3SeriesResistance432
Contentsix
7.4ComparisonofModelswithExperiment434
7.5Summary435
7.6ReadingList438
7.7References438
7.8ReviewQuestions438
7.9Problems439
Chapter8
AdditionalConsiderations
forFETs442
8.1Introduction442
8.2MeasurementofThresholdVoltageand
Low-FieldMobility443
8.3SubthresholdLeakageCurrent445
8.4ComplementaryMOSFETs(CMOS)448
8.4.1OperationoftheInverter449
*8.4.2MatchingofCMOSdevices450
8.5SwitchinginCMOSInverter
Circuits452
8.5.1EffectofLoadCapacitance452
8.5.2Propagation(Gate)DelayinSwitching
Circuits454
8.5.3Pass-throughCurrentinCMOSSwitching457
8.6MOSFETEquivalentCircuit457
8.6.1Small-SignalEquivalentCircuit458
8.6.2CMOSAmplifiers463
8.7UnityCurrentGainCutoffFrequencyfT463
*8.8Short-ChannelEffects464
8.8.1DependenceofEffectiveChannelLengthonVDS464
8.8.2DependenceofThresholdVoltageontheDrainVoltage466
8.9MOSFETScaling467
8.10SilicononInsulator(SOI)469
8.11OtherFETs473
8.11.1HeterojunctionField-EffectTransistors(HFETs)473
8.11.2MESFETs476
8.11.3JunctionField-EffectTransistors(JFETs)481
8.11.4BulkChannelFETs:Quantitative482
8.12Summary485
8.13ReadingList486
8.14References486
8.15ReviewQuestions487
8.16Problems487
SupplementtoPart3
Field-EffectTransistors491
S3.1Introduction491
S3.2CommentsontheFormulationfortheChannelChargeQch491
S3.2.1EffectofVaryingDepletionWidthontheChannelCharge491
S3.2.2DependenceoftheChannelChargeQchontheLongitudinalField
L493
S3.3ThresholdVoltageforMOSFETs495
S3.3.1FixedCharge497
S3.3.2InterfaceTrappedCharge497
S3.3.3BulkCharge498
S3.3.4EffectofChargesontheThresholdVoltage498
S3.3.5FlatBandVoltage499
S3.3.6ThresholdVoltageControl502
*S3.3.7ChannelQuantumEffects504
S3.4UniversalRelationsforLow-FieldMobility507
S3.5MeasurementofVT509
*S3.6AlternativeMethodtoDetermineVTandμlfApplicabletoLong-Channel
MOSFETs513
S3.7MOSCapacitors514
S3.7.1IdealMOSCapacitance515
S3.7.2TheC-VGCharacteristicsofRealMOSCapacitors520
S3.7.3ParameterAnalysesfromC-VGMeasurements521
xContents
*S3.8MOSCapacitorHybridDiagrams521
*S3.8.1DynamicRandom-AccessMemories(DRAMs)525
*S3.8.2Charge-CoupledDevices(CCDs)527
*S3.9DeviceDegradation530
*S3.9.1LightlyDopedDrain(LDD)MOSFETs534
*S3.10Low-TemperatureOperationofMOSFETs535
*S3.11ApplicationsofSPICEtoMOSFETs538
S3.11.1ExamplesoftheUseofSPICEwithMOSFETs539
S3.11.2DeterminingtheTransientCharacteristicsofaCMOSDigitalInverter543
S3.12Summary545
S3.13ReadingList546
S3.14References546
S3.15ReviewQuestions547
S3.16Problems547
PART4
BipolarJunctionTransistors551
Chapter9
BipolarJunctionDevices:Statics557
9.1Introduction557
9.2OutputCharacteristics(Qualitative)561
9.3CurrentGain563
9.4ModelofaPrototypeBJT564
9.4.1CollectionEfficiencyM567
9.4.2InjectionEfficiencyγ568
9.4.3BaseTransportEfficiencyαT570
9.5DopingGradientsinBJTs575
9.5.1TheGraded-BaseTransistor578
9.5.2EffectofBaseFieldonβ582
9.6TheBasicEbers-MollDCModel583
9.7CurrentCrowdingandBaseResistanceinBJTs586
9.8BaseWidthModulation(EarlyEffect)590
9.9AvalancheBreakdown594
9.10HighInjection594
9.11BasePush-out(Kirk)Effect595
9.12RecombinationintheEmitter-BaseJunction597
9.13Summary598
9.14ReadingList599
9.15References599
9.16ReviewQuestions600
9.17Problems601
Chapter10
Time-DependentAnalysisofBJTs607
10.1Introduction607
10.2Ebers-MollACModel607
10.3Small-SignalEquivalentCircuits609
10.3.1Hybrid-PiModels611
10.4Stored-ChargeCapacitanceinBJTs615
10.5FrequencyResponse620
10.5.1UnityCurrentGainFrequencyfT621
10.5.2BaseTransitTime623
10.5.3Base-CollectorTransitTime,tBC624
10.5.4MaximumOscillationFrequencyfmax625
10.6High-FrequencyTransistors625
10.6.1DoublePolySiSelf-AlignedTransistor625
10.7BJTSwitchingTransistor628
10.7.1OutputLow-to-HighTransitionTime629
Contentsxi
10.7.2Schottky-ClampedTransistor631
10.7.3Emitter-CoupledLogic632
10.8BJTs,MOSFETs,andBiMOS635
10.8.1ComparisonofBJTsandMOSFETs635
10.8.2BiMOS636
10.9Summary638
10.10ReadingList639
10.11References639
10.12ReviewQuestions639
10.13Problems639
SupplementtoPart4BipolarDevices642
S4.1Introduction642
S4.2HeterojunctionBipolarTransistors(HBTs)642
S4.2.1UniformlyDopedHBT644
S4.2.2Graded-CompositionHBT646
S4.3ComparisonofSi-Base,SiGe-Base,andGaAs-BaseHBTs649
S4.4Thyristors(npnpSwitchingDevices)650
S4.4.1Four-LayerDiodeSwitch650
S4.4.2Two-TransistorModelofannpnpSwitch652
S4.5SiliconControlledRectifiers(SCRs)654
S4.6ParasiticpnpnSwitchinginCMOSCircuits658
S4.7ApplicationsofSPICEtoBJTs658
S4.7.1ParasiticEffects661
S4.7.2LowtoMediumCurrents661
S4.7.3HighCurrents663
S4.8ExamplesoftheApplicationofSPICEtoBJTs664
S4.9Summary669
S4.10References670
S4.11ReviewQuestions670
S4.12Problems671
PART5
OptoelectronicDevices673
Chapter11
OptoelectronicDevices675
11.1IntroductionandPreview675
11.2Photodetectors675
11.2.1GenericPhotodetector675
*11.2.2SolarCells683
11.2.3Thep-i-n(PIN)Photodetector689
11.2.4AvalanchePhotodiodes691
11.3Light-EmittingDiodes692
11.3.1SpontaneousEmissioninaForward-BiasedJunction692
*11.3.2IsoelectronicTraps694
11.3.3BlueLEDsandWhiteLEDs696
11.3.4InfraredLEDs696
11.4LaserDiodes702
11.4.1OpticalGain703
11.4.2Feedback706
11.4.3Gain+Feedback
Laser709
11.4.4LaserStructures710
11.4.5OtherSemiconductorLaserMaterials714
11.5ImageSensors715
11.5.1Charge-CoupledImageSensors715
11.5.2MOSImageSensors717
11.6Summary718
11.7ReadingList719
11.8References719
11.9ReviewQuestions719
11.10Problems720
Appendices
AppendixAConstants724
AppendixBListofSymbols725
PREFACE...