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微机电器件设计、制造及计算机辅助设计
作者：郭占社
出版社：北京航空航天大学出版社
出版时间：2016-06-01
ISBN：9787512421097
定价：¥65.00
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内容简介
Thisbookfirstlyintroducesthepertinentfundamentaltheory，importantmaterialandfabricationprocessofmicroＧelectromechanicalsystems．Basedonthesetheories，thedesignruleandimportantengineeringexamplesaredescribedindetail．Then，manyengineeringapplicationsforMEMSincludingtheaccelerationmeasurement，theangularspeedmeasurementandthepressuremeasurementareintroduced．Finally，finiteelementmethodisintroducedinordertoprovethecorrectnessofthedesign．Thisengineeringapplicationofsimulationincludesthestaticandmodalanalysisofthebeam，capacitanceanalysis，thermalＧstructureanalysisofthedeviceandfatigueanalysisetc．Itcanbeselectedasthereferencetothepostgraduates，undergraduatesandpertinentengineeringstaffwhoseresearch directionsareinstrumentationscienceandtechnology，controlscienceandengineering，mechanicalengineeringetc．
作者简介
暂缺《微机电器件设计、制造及计算机辅助设计》作者简介
目录
Chapter1 Introduction ………………………………………………………………………… 1
1．1 ConceptofMEMS ……………………………………………………………………… 1
1．2 DevelopmentofMEMS ………………………………………………………………… 4
1．3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2．1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1 Introduction ……………………………………………………………………… 12
2．1．2 Operatingprinciples …………………………………………………………… 13
2．1．3 Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1 Introduction ……………………………………………………………………… 34
2．2．2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3 MembranetheoryofMEMS ………………………………………………………… 47
2．3．1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3．1 Monocrystallinesilicon ……………………………………………………………… 53
3．1．1 Introduction ……………………………………………………………………… 53
3．1．2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2 Polycrystallinesilicon ………………………………………………………………… 64
3．3 Silica …………………………………………………………………………………… 66
3．4 Piezoelectricmaterials ………………………………………………………………… 67
3．4．1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2 Quartzcrystal …………………………………………………………………… 68
3．4．3 Piezoelectricceramics …………………………………………………………… 73
3．5 OtherMEMSmaterials ……………………………………………………………… 75
3．6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4．1 MEMSlithographyprocess ………………………………………………………… 78
4．2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1 Wafercleaning …………………………………………………………………… 80
4．2．2 Siliconoxidation ………………………………………………………………… 80
4．2．3 Spincoatingprocess …………………………………………………………… 87
4．2．4 Prebaking ………………………………………………………………………… 90
4．2．5 Exposure ………………………………………………………………………… 92
4．2．6 Development ……………………………………………………………………… 94
4．2．7 Hardening ………………………………………………………………………… 96
4．2．8 FabricationoftheSiO2 window ………………………………………………… 97
4．3 SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1 Bulksilicontechnology ………………………………………………………… 98
4．3．2 Surfacesiliconprocess ………………………………………………………… 103
4．3．3 LIGAtechnology ……………………………………………………………… 104
4．3．4 Sputteringtechnology ………………………………………………………… 105
4．3．5 LiftGoffprocess ………………………………………………………………… 107
4．4 Filmpreparationtechnology………………………………………………………… 107
4．5 Bondingprocess ……………………………………………………………………… 108
4．5．1 Anodicbondingprocess………………………………………………………… 109
4．5．2 SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3 Metaleutecticbonding ………………………………………………………… 113
4．5．4 Coldpressureweldingbonding ……………………………………………… 114
4．6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1 Introduction …………………………………………………………………… 115
4．6．2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5．1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2 MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1 Structureandworkingprinciple ……………………………………………… 141
5．3．2 Calculationofpertinenttheory ……………………………………………… 142
5．3．3 Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4 Testingresultsanddataanalysis……………………………………………… 152
5．3．5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1 Workingprinciple ……………………………………………………………… 177
6．2．2 DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3 Classificationofmicromechanicalgyroscope ………………………………… 188
6．3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1 Workingpincinple ……………………………………………………………… 190
6．3．2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4 MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1 Introduction …………………………………………………………………… 198
6．4．2 Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3 Theoreticalcalculation ………………………………………………………… 200
6．4．4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5 Experimentresultanddiscussion …………………………………………… 209
6．5 Microscopicmorphologytestingmethod ………………………………………… 211
6．6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1 Importantconceptsofthesoftware………………………………………………… 218
7．2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3 ThecoordinatesysteminAnsys …………………………………………………… 221
7．4 Engineeringexamples ……………………………………………………………… 226
7．4．1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4 Fatiguestrengthcalculationexample ………………………………………… 264
7．5 Summary ……………………………………………………………………………… 272
1．1 ConceptofMEMS ……………………………………………………………………… 1
1．2 DevelopmentofMEMS ………………………………………………………………… 4
1．3 MEMSCAD …………………………………………………………………………… 9
Chapter2 BasictheoryofMEMS …………………………………………………………… 12
2．1 TheoryofelectrostaticMEMScombactuators …………………………………… 12
2．1．1 Introduction ……………………………………………………………………… 12
2．1．2 Operatingprinciples …………………………………………………………… 13
2．1．3 Platecapacitortheoryinidealcondition ……………………………………… 14
2．1．4 ThemodifiedmodelofMEMSplatecapaciator ……………………………… 17
2．1．5 Calculationofelectrostaticcombdrivingforceinidealsituation …………… 24
2．1．6 Weakcapacitancedetectionmethodofelectrostaticcombdrive …………… 26
2．2 RelevanttheoreticalcalculationsfortheMEMScantileverbeam ………………… 34
2．2．1 Introduction ……………………………………………………………………… 34
2．2．2 Theoreticalcalculationmethodforcantileverbeam ………………………… 35
2．2．3 RelevanttheoreticalcalculationofaxialtensileandcompressiveonsingleGend
clampedbeams ………………………………………………………………… 36
2．2．4 RelatedtheoreticalcalculationsofdoubleGendclampedbeamsaxialtension
andcompression ………………………………………………………………… 40
2．3 MembranetheoryofMEMS ………………………………………………………… 47
2．3．1 Theoryofclampedaroundcirculardiaphragm ………………………………… 48
2．3．2 Theoryofclampedaroundrectangularflatdiaphragm ……………………… 49
References …………………………………………………………………………………… 52
Chapter3 MEMSmaterials …………………………………………………………………… 53
3．1 Monocrystallinesilicon ……………………………………………………………… 53
3．1．1 Introduction ……………………………………………………………………… 53
3．1．2 Crystalorientationofmonocrystallinesilicon ………………………………… 55
3．2 Polycrystallinesilicon ………………………………………………………………… 64
3．3 Silica …………………………………………………………………………………… 66
3．4 Piezoelectricmaterials ………………………………………………………………… 67
3．4．1 Piezoelectriceffectandinversepiezoelectriceffectofmaterials …………… 67
3．4．2 Quartzcrystal …………………………………………………………………… 68
3．4．3 Piezoelectricceramics …………………………………………………………… 73
3．5 OtherMEMSmaterials ……………………………………………………………… 75
3．6 Summary ……………………………………………………………………………… 76
Chapter4 MEMStechnology ………………………………………………………………… 77
4．1 MEMSlithographyprocess ………………………………………………………… 78
4．2 KeytechnologyofMEMSlithographyprocess …………………………………… 80
4．2．1 Wafercleaning …………………………………………………………………… 80
4．2．2 Siliconoxidation ………………………………………………………………… 80
4．2．3 Spincoatingprocess …………………………………………………………… 87
4．2．4 Prebaking ………………………………………………………………………… 90
4．2．5 Exposure ………………………………………………………………………… 92
4．2．6 Development ……………………………………………………………………… 94
4．2．7 Hardening ………………………………………………………………………… 96
4．2．8 FabricationoftheSiO2 window ………………………………………………… 97
4．3 SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1 Bulksilicontechnology ………………………………………………………… 98
4．3．2 Surfacesiliconprocess ………………………………………………………… 103
4．3．3 LIGAtechnology ……………………………………………………………… 104
4．3．4 Sputteringtechnology ………………………………………………………… 105
4．3．5 LiftGoffprocess ………………………………………………………………… 107
4．4 Filmpreparationtechnology………………………………………………………… 107
4．5 Bondingprocess ……………………………………………………………………… 108
4．5．1 Anodicbondingprocess………………………………………………………… 109
4．5．2 SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3 Metaleutecticbonding ………………………………………………………… 113
4．5．4 Coldpressureweldingbonding ……………………………………………… 114
4．6 Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1 Introduction …………………………………………………………………… 115
4．6．2 EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3 EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7 Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5 Frictionwearandtearundermicroscale ……………………………………… 126
5．1 OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1 MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2 MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3 MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2 OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1 OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2 OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3 ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1 Structureandworkingprinciple ……………………………………………… 141
5．3．2 Calculationofpertinenttheory ……………………………………………… 142
5．3．3 Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4 Testingresultsanddataanalysis……………………………………………… 152
5．3．5 ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4 Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6 MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1 Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1 Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2 Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3 Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4 Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5 ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2 Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1 Workingprinciple ……………………………………………………………… 177
6．2．2 DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3 Classificationofmicromechanicalgyroscope ………………………………… 188
6．3 Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1 Workingpincinple ……………………………………………………………… 190
6．3．2 Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4 MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1 Introduction …………………………………………………………………… 198
6．4．2 Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3 Theoreticalcalculation ………………………………………………………… 200
6．4．4 Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5 Experimentresultanddiscussion …………………………………………… 209
6．5 Microscopicmorphologytestingmethod ………………………………………… 211
6．6 Summary ……………………………………………………………………………… 212
References…………………………………………………………………………………… 212
Chapter7 Applicationexamplesofthefiniteelementmethodinthedesignof
MEMSdevices …………………………………………………………………… 218
7．1 Importantconceptsofthesoftware………………………………………………… 218
7．2 IntroductionoftheAnsyssoftwareinterface……………………………………… 220
7．3 ThecoordinatesysteminAnsys …………………………………………………… 221
7．4 Engineeringexamples ……………………………………………………………… 226
7．4．1 StaticanalysisofsingleGclampedbeam ……………………………………… 226
7．4．2 ModalanalysisofdoubleGclampedbeam ……………………………………… 245
7．4．3 CapacitanceanalysisofMEMSelectrostaticcombfingersdrive …………… 257
7．4．4 Fatiguestrengthcalculationexample ………………………………………… 264
7．5 Summary ……………………………………………………………………………… 272
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