书籍详情
多层纳米结构中的输运：动力学平均场方法（影印版）
作者：（美）弗雷里克斯 （J.K.Freericks）著
出版社：北京大学出版社
出版时间：2012-12-01
ISBN：9787301216620
定价：¥87.00
购买这本书可以去
内容简介
为有力推动我国物理学研究、加快相关学科的建设与发展，特别是展现近年来中国物理学者的研究水平和成果，北京大学出版社在国家出版基金的支持下推出了《中外物理学精品书系》，试图对以上难题进行大胆的尝试和探索。《中外物理学精品书系·引进系列（3）·多层纳米结构中的输运：动力学平均场方法（影印版）》编委会集结了数十位来自内地和香港顶尖高校及科研院所的知名专家学者。他们都是目前该领域十分活跃的专家，确保了整套丛书的权威性和前瞻性。《中外物理学精品书系·引进系列（3）·多层纳米结构中的输运：动力学平均场方法（影印版）》内容丰富，涵盖面广，可读性强，其中既有对我国传统物理学发展的梳理和总结，也有对正在蓬勃发展的物理学前沿的全面展示；既引进和介绍了世界物理学研究的发展动态，也面向国际主流领域传播中国物理的优秀专著。可以说，《中外物理学精品书系》力图完整呈现近现代世界和中国物理科学发展的全貌，是一部目前国内为数不多的兼具学术价值和阅读乐趣的经典物理丛书。《中外物理学精品书系》另一个突出特点是，在把西方物理的精华要义“请进来”的同时，也将我国近现代物理的优秀成果“送出去”。物理学科在世界范围内的重要性不言而喻，引进和翻译世界物理的经典著作和前沿动态，可以满足当前国内物理教学和科研工作的迫切需求。另一方面，改革开放几十年来，我国的物理学研究取得了长足发展，一大批具有较高学术价值的著作相继问世。这套丛书首次将一些中国物理学者的优秀论著以英文版的形式直接推向国际相关研究的主流领域，使世界对中国物理学的过去和现状有更多的深人了解，不仅充分展示出中国物理学研究和积累的“硬实力”，也向世界主动传播我国科技文化领域不断创新的“软实力”，对全面提升中国科学、教育和文化领域的国际形象起到重要的促进作用。
作者简介
暂缺《多层纳米结构中的输运：动力学平均场方法（影印版）》作者简介
目录
Preface
Acknowledgments
1.Introduction to Multilayered Nanostructures
1.1 Thin Film Growth and Multilayered Nanostructures
1.2 Strongly Correlated Materials
1.3 The Proximity Effect
1.4 Electronic Charge Reconstruction at an Interface
1.5 Roadmap to Real-Materials Calculations
2.Dynamical Mean-Field Theory in the Bulk
2.1 Models of Strongly Correlated Electrons
2.2 Second Quantization
2.3 Imaginary Time Green's Functions
2.4 Real Time Green's Functions
2.5 The Limit d oo and the Mapping onto a Time-Dependent Impurity Problem
2.6 Impurity Problem Solvers
2.7 Computational Algorithms
2.8 Linear-Response dc-Transport in the Bulk
2.9 Metal-Insulator Transitions within DMFT
2.10 Bulk Charge and Thermal Transport
3.Dynamical Mean-Field Theory of a Multilayered Nanostructure
3.1 Potthoff-Nolting Approach to Multilayered Nanostructures
3.2 Quantum Zipper Algorithm （Renormalized Perturbation Expansion）
3.3 ComputationalMethods .
3.4 Density of States for a Nanostructure
3.5 Longitudinal Charge Transport Through a Nanostructure
3.6 Charge Reconstruction （Schottky Barriers）
3.7 Longitudinal Heat Transport Through a Nanostructure
3.8 Superconducting Leads and Josephson Junctions
3.9 Finite Dimensions and Vertex Corrections
4.Thouless Energy and Normal-State Transport
4.1 Heuristic Derivation of the Generalized Thouless Energy
4.2 Thouless Energy in Metals
4.3 Thouless Energy in Insulators
4.4 Crossover from Tunneling to Incoherent Transport in Devices
5.Josephson Junctions and Superconducting Transport
5.1 Introduction to Superconducting Electrorucs Devices
5.2 Superconducting Proximity Effect
5.3 Josephson Current
5.4 Figure-of-Merit for a Josephson Junction
5.5 Effects of Temperature
5.6 Density of States and Andreev Bound States
6.Thermal Transport
6.1 Electronic Charge Reconstruction Near a Metal-Insulator Transition
6.2 Thermal Transport Through a Barrier Near the Metal-Insulator Transition
7.Future Directions
7.1 Spintronics Devices
7.2 Multiband Models for Real Materials
7.3 Nonequilibrium Properties
7.4 Summary
Appendix A Problems
Bibliography
Index
Acknowledgments
1.Introduction to Multilayered Nanostructures
1.1 Thin Film Growth and Multilayered Nanostructures
1.2 Strongly Correlated Materials
1.3 The Proximity Effect
1.4 Electronic Charge Reconstruction at an Interface
1.5 Roadmap to Real-Materials Calculations
2.Dynamical Mean-Field Theory in the Bulk
2.1 Models of Strongly Correlated Electrons
2.2 Second Quantization
2.3 Imaginary Time Green's Functions
2.4 Real Time Green's Functions
2.5 The Limit d oo and the Mapping onto a Time-Dependent Impurity Problem
2.6 Impurity Problem Solvers
2.7 Computational Algorithms
2.8 Linear-Response dc-Transport in the Bulk
2.9 Metal-Insulator Transitions within DMFT
2.10 Bulk Charge and Thermal Transport
3.Dynamical Mean-Field Theory of a Multilayered Nanostructure
3.1 Potthoff-Nolting Approach to Multilayered Nanostructures
3.2 Quantum Zipper Algorithm （Renormalized Perturbation Expansion）
3.3 ComputationalMethods .
3.4 Density of States for a Nanostructure
3.5 Longitudinal Charge Transport Through a Nanostructure
3.6 Charge Reconstruction （Schottky Barriers）
3.7 Longitudinal Heat Transport Through a Nanostructure
3.8 Superconducting Leads and Josephson Junctions
3.9 Finite Dimensions and Vertex Corrections
4.Thouless Energy and Normal-State Transport
4.1 Heuristic Derivation of the Generalized Thouless Energy
4.2 Thouless Energy in Metals
4.3 Thouless Energy in Insulators
4.4 Crossover from Tunneling to Incoherent Transport in Devices
5.Josephson Junctions and Superconducting Transport
5.1 Introduction to Superconducting Electrorucs Devices
5.2 Superconducting Proximity Effect
5.3 Josephson Current
5.4 Figure-of-Merit for a Josephson Junction
5.5 Effects of Temperature
5.6 Density of States and Andreev Bound States
6.Thermal Transport
6.1 Electronic Charge Reconstruction Near a Metal-Insulator Transition
6.2 Thermal Transport Through a Barrier Near the Metal-Insulator Transition
7.Future Directions
7.1 Spintronics Devices
7.2 Multiband Models for Real Materials
7.3 Nonequilibrium Properties
7.4 Summary
Appendix A Problems
Bibliography
Index
猜您喜欢
