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半导体物理电子学(第二版)

半导体物理电子学(第二版)

作者:(美国)(Li、S.S)李

出版社:科学出版社

出版时间:2008-02-01

ISBN:9787030209405

定价:¥98.00

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内容简介
  本书全面介绍了半导体物理的基本内容,这些内容是理解半导体的物理性质和光电器件制备原理的基础。本书系统性强,合理地安排了物理原理,表征法以及半导体材料和器件的应用等内容,兼顾了物理学家、材料学家和设备工程师的需求。本书反映了半导体技术在过去十年的进步,包括许多新出现并已进入市场的半导体器件。本书适合于电子工程,材料科学,物理和化学工程的研究生,也可供半导体工业的过程工程师和设备工程师参考。
作者简介
暂缺《半导体物理电子学(第二版)》作者简介
目录
Preface
1.Classification of Solids and Crystal Structure
 1.1 Introduction
 1.2 The Bravais Lattice
 1.3 The Crystal Structure
 1.4 Miller Indices and Crystal Planes
 1.5 The Reciprocal Lattice and Brillouin Zone
 1.6 Types of Crystal Bindings
 1.7 Defects in a Crystalline Solid
  Problems
  Bibliography
2.Lattice Dynamics
 2.1 Introduction
 2.2 The One-Dimensional Linear Chain
 2.3 Dispersion Relation for a Three-Dimensional Lattice
 2.4 The Concept of Phonons
 2.5 The Density of States and Lattice Spectrum
 2.6 Lattice Specific Heat
  Problems
  References
  Bibliography
3.Semiconductor Statistics
 3.1 Introduction
 3.2 Maxwell-Boltzmann Statistics
 3.3 Fermi-Dirac Statistics
 3.4 Bose-Einstein Statistics
 3.5 Statistics for the Shallow-Impurity States in a Semiconductor
  Problems
  Bibliography
4.Energy Band Theory
 4.1 Introduction
 4.2 Basic Quantum Concepts and Wave Mechanics
 4.3 The Bloch-Floquet Theorem
 4.4 The Kronig-Penney Model
 4.5 The Nearly Free Electron Approximation
 4.6 The Tight-Binding Approximation
 4.7 Energy Band Structures for Some Semiconductors
 4.8 The Effective Mass Concept for Electrons and Holes
 4.9 Energy Band Structures and Density of States for Low-Dimensional Systems
  Problems
  References
  Bibliography
5.Equilibrium Properties of Semiconductors
 5.1 Introduction
 5.2 Densities of Electrons and Holes in a Semiconductor
 5.3 Intrinsic Semiconductors
 5.4 Extrinsic Semiconductors
 5.5 Ionization Energies of Shallow-and Deep-Level Impurities
 5.6 Hall Effect,Electrical Conductivity,and Hall Mobility
 5.7 Heavy Doping Effects in a Degenerate Semiconductor
  Problems
  References
  Bibliography
6.Excess Carrier Phenomenon in Semiconductors
 6.1 Introduction
 6.2 Nonradiative Recombination: The Shockley-Read-Hall Model
 6.3 Band-to-Band Radiative Recombination
 6.4 Band-to-Band Auger Recombination
 6.5 Basic Semiconductor Equations
 6.6 The Charge-Neutrality Equation
 6.7 The Haynes-Shockley Experiment
 6.8 The Photoconductivity Decay Experiment
 6.9 Surface States and Surface Recombination Velocity
 6.10 Deep-Level Transient Spectroscopy Technique
 6.11 Surface Photovoltage Technique
  Problems
  References
  Bibliography
7.Transport Properties of Semiconductors
8.Scattering Mechanisms and Carrier Moblities in Semiconductors
9.Optical Properties and Photoelectric Effects
10.Metal-Semiconductor Contacts
11.P-n Junction Diodes
12.Solar Cells and Photodetectors
13.Light-Emitting Devices
14.Bipolar Juction Transistors
15.Metal-Oxide-Semiconductor Field-Effect Transistors
16.High-Speed Ⅲ-Ⅴ Semiconductor Devices
Solutions to Selected Problems
Appendix
Index
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