书籍详情
半导体器件导论
作者：（美）尼曼（Neamen, D.A.）著
出版社：清华大学出版社
出版时间：2006-01-01
ISBN：9787302124511
定价：¥69.00
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内容简介
本书是美国新墨西哥大学电机与计算机工程系Neamen教授所著的"Semiconductor Physics and Devices，3rd edition"一书的改进版本。 与原书相比，本书更好地将固体晶格结构、量子力学入门知识、固体的量子理论以及半导体物理和半导体器件有机地结合在一起。利用本书，学生只需要具有高等数学和大学普通物理的基础，用一个学期就可以系统地学习到半导体器件的基本理论，从而为进入微电子学研究领域打下一个良好的基础。这一特点也是目前国内出版的同类教材很难达到的。 另外，本书还尽量保持了原书的主要优点： (1)注重基本概念和方法。本书从内容的整体编排到具体章节的叙述，都体现了突出物理概念、强调基本分析方法的指导思想。书中的数学推导和物理分析融为一体，得出的结论不仅对理解物理概念十分重要，而且经得起反复推敲。书中还采用了大量非常清晰的插图，帮助读者更好地理解基本概念。 (2)可读性强，便于自学。全书脉络清楚，说理透彻，易于读者理解和掌握。每一章的开头都有引言，告诉读者可以从本章学到什么，应该掌握什么；每一章中都有例题和读者自测题；每一章的最后还有总结、复习提纲和大量习题(其中包含一些采用计算机进行模拟计算的练习题)。通过举例和练习加深读者对基本概念的理解是本书突出的特点。
作者简介
暂缺《半导体器件导论》作者简介
目录
Preface.
CHAPTER1TheCrystalStructureofSolids
1.0Preview
1.1SemiconductorMaterials
1.2TypesofSolids
1.3SpaceLattices
1.4AtomicBonding
1.5ImperfectionsandImpuritiesinSolids
∑1.6GrowthofSemiconductorMaterials
∑1.7DeviceFabricationTechniques:Oxidation
1.8Summary
Problems
CHAPTER2TheoryofSolids
2.0Preview
2.1PrinciplesofQuantumMechanics
2.2EnergyQuantizationandProbabilityConcepts
2.3Energy-BandTheory
2.4DensityofStatesFunction
2.5StatisticalMechanics
2.6Summary
Problems
CHAPTER3TheSemiconductorinEquilibrium
3.0Preview
3.1ChargeCarriersinSemiconductors
3.2DopantAtomsandEnergyLevels
3.3CarrierDistributionsintheExtrinsicSemiconductor
3.4StatisticsofDonorsandAcceptors
3.5CarrierConcentrations--EffectsofDoping
3.6PositionofFermiEnergyLevel--EffectsofDopingandTemperature
∑3.7DeviceFabricationTechnology:DiffusionandIonImplantation
3.8Summary
Problems
CHAPTER4CarrierTransportandExcessCarrier
Phenomena128
4.0Preview
4.1CarrierDrift
4.2CarrierDiffusion
4.3GradedImpurityDistribution
4.4CarrierGenerationandRecombination
∑4.5TheHallEffect
4.6Summary
Problems
CHAPTER5ThepnJunctionandMetal-SemiconductorContact
5.0Preview
5.1BasicStructureofthepnJunction
5.2ThepnJunction--ZeroAppliedBias
5.3ThepnJunction--ReverseAppliedBias
5.4Metal-SemiconductorContact--RectifyingJunction
5.5ForwardAppliedBias--AnIntroduction
∑5.6Metal-SemiconductorOhmic
∑5.7NonuniformlyDopedpnJunctions
∑5.8DeviceFabricationTechniques:Photolithography,Etching,andBonding
5.9Summary
Problems
CHAPTER6FundamentalsoftheMetal-oxide-SemiconductorField-EffectTransisitor
6.0Preview
6.1TheMOSField-EffectTransistorAction
6.2TheTwo-TerminalMOSCapacitor
6.3PotentialDifferencesintheMOSCapacitor
6.4Capacitance-VoltageCharacteristics
6.5TheBasicMOSFETOperation
6.6Small-SignalEquivalentCircuitandFrequencyLimitationFactors
∑6.7DeviceFabricationTechniques
6.8Summary
Problems
CHAPTER7Metal-Oxide-SemiconductorField-EffectTransistor:AdditionalConcepts
7.0Preview
7.1MOSFETScaling
7.2NonidealEffects
7.3ThresholdVoltageModifications
7.4AdditionalElectricalDharacteristics
7.5DeviceFabricationTechniques:SpecializedDevices
7.6Summary..
Problems
CHAPTER8NonequilibriumExcessCarriersinSemiconductors
8.0Preview
8.1CarrierGenerationandRecombination
8.2AnalysisofExcessCarriers
8.3AmbipolarTransport
8.4Quasi-FermiEnergyLevels
8.5ExcessCarrierLifetime
8.6SurfaceEffects
8.7Summary
Problems
CHAPTER9ThepnJunctionandSchottkyDiodes
9.0Preview
9.1ThepnandSchottkyBarrierJunctionsRevisited
9.2ThepnJunction--IdealCurrent-VoltageRelationship
9.3TheSchottkyBarrierJunction--IdealCurrent-VoltageRelationship
9.4Small-SignalModelofthepnJunction
9.5Generation-RecombinationCurrents
9.6JunctionBreakdown
9.7ChargeStorageandDiodeTransients
9.8Summary
Problems
CHAPTER10TheBipolarTransistor
10.0Preview
10.1TheBipolarTransistorAction
10.2Minority-CarrierDistribution
10.3Low-frequencyCommon-BaseCurrentGain
10.4NonidealEffects
10.5Hybrid-PiEquivalentCircuitModel
10.6FrequencyLimitations
∑10.7Large-SignalSwitching
∑10.8DeviceFabricationTechniques
10.9Summary
Problems
CHAPTER11AdditionalSemiconductorDevicesandDeviceConcepts
11.0Preview
11.1TheJunctionField-EffectTransistor
11.2Heterojunctions
11.3TheThyristor
11.4AdditionalMOSFETConcepts
11.5MicroelectromechanicalSystems(MEMS)
11.6Summary
Problems
CHAPTER12OpticalDevices
12.0Preview
12.1OpticalAbsorption
12.2SolarCells
12.3Photodetectors
12.4Light-EmittingDiodes
12.5LaserDiodes
12.6Summary
Problems
APPENDIXASelectedListofSymbols
APPENDIXBSystemofUnits,ConversionFactors,andGeneralConstants
APPENDIXCUnitofEnergy—TheElectron-Volt
APPENDIXD“Derivation”andApplicationsofSchrodinger'sWaveEquation
Index...
CHAPTER1TheCrystalStructureofSolids
1.0Preview
1.1SemiconductorMaterials
1.2TypesofSolids
1.3SpaceLattices
1.4AtomicBonding
1.5ImperfectionsandImpuritiesinSolids
∑1.6GrowthofSemiconductorMaterials
∑1.7DeviceFabricationTechniques:Oxidation
1.8Summary
Problems
CHAPTER2TheoryofSolids
2.0Preview
2.1PrinciplesofQuantumMechanics
2.2EnergyQuantizationandProbabilityConcepts
2.3Energy-BandTheory
2.4DensityofStatesFunction
2.5StatisticalMechanics
2.6Summary
Problems
CHAPTER3TheSemiconductorinEquilibrium
3.0Preview
3.1ChargeCarriersinSemiconductors
3.2DopantAtomsandEnergyLevels
3.3CarrierDistributionsintheExtrinsicSemiconductor
3.4StatisticsofDonorsandAcceptors
3.5CarrierConcentrations--EffectsofDoping
3.6PositionofFermiEnergyLevel--EffectsofDopingandTemperature
∑3.7DeviceFabricationTechnology:DiffusionandIonImplantation
3.8Summary
Problems
CHAPTER4CarrierTransportandExcessCarrier
Phenomena128
4.0Preview
4.1CarrierDrift
4.2CarrierDiffusion
4.3GradedImpurityDistribution
4.4CarrierGenerationandRecombination
∑4.5TheHallEffect
4.6Summary
Problems
CHAPTER5ThepnJunctionandMetal-SemiconductorContact
5.0Preview
5.1BasicStructureofthepnJunction
5.2ThepnJunction--ZeroAppliedBias
5.3ThepnJunction--ReverseAppliedBias
5.4Metal-SemiconductorContact--RectifyingJunction
5.5ForwardAppliedBias--AnIntroduction
∑5.6Metal-SemiconductorOhmic
∑5.7NonuniformlyDopedpnJunctions
∑5.8DeviceFabricationTechniques:Photolithography,Etching,andBonding
5.9Summary
Problems
CHAPTER6FundamentalsoftheMetal-oxide-SemiconductorField-EffectTransisitor
6.0Preview
6.1TheMOSField-EffectTransistorAction
6.2TheTwo-TerminalMOSCapacitor
6.3PotentialDifferencesintheMOSCapacitor
6.4Capacitance-VoltageCharacteristics
6.5TheBasicMOSFETOperation
6.6Small-SignalEquivalentCircuitandFrequencyLimitationFactors
∑6.7DeviceFabricationTechniques
6.8Summary
Problems
CHAPTER7Metal-Oxide-SemiconductorField-EffectTransistor:AdditionalConcepts
7.0Preview
7.1MOSFETScaling
7.2NonidealEffects
7.3ThresholdVoltageModifications
7.4AdditionalElectricalDharacteristics
7.5DeviceFabricationTechniques:SpecializedDevices
7.6Summary..
Problems
CHAPTER8NonequilibriumExcessCarriersinSemiconductors
8.0Preview
8.1CarrierGenerationandRecombination
8.2AnalysisofExcessCarriers
8.3AmbipolarTransport
8.4Quasi-FermiEnergyLevels
8.5ExcessCarrierLifetime
8.6SurfaceEffects
8.7Summary
Problems
CHAPTER9ThepnJunctionandSchottkyDiodes
9.0Preview
9.1ThepnandSchottkyBarrierJunctionsRevisited
9.2ThepnJunction--IdealCurrent-VoltageRelationship
9.3TheSchottkyBarrierJunction--IdealCurrent-VoltageRelationship
9.4Small-SignalModelofthepnJunction
9.5Generation-RecombinationCurrents
9.6JunctionBreakdown
9.7ChargeStorageandDiodeTransients
9.8Summary
Problems
CHAPTER10TheBipolarTransistor
10.0Preview
10.1TheBipolarTransistorAction
10.2Minority-CarrierDistribution
10.3Low-frequencyCommon-BaseCurrentGain
10.4NonidealEffects
10.5Hybrid-PiEquivalentCircuitModel
10.6FrequencyLimitations
∑10.7Large-SignalSwitching
∑10.8DeviceFabricationTechniques
10.9Summary
Problems
CHAPTER11AdditionalSemiconductorDevicesandDeviceConcepts
11.0Preview
11.1TheJunctionField-EffectTransistor
11.2Heterojunctions
11.3TheThyristor
11.4AdditionalMOSFETConcepts
11.5MicroelectromechanicalSystems(MEMS)
11.6Summary
Problems
CHAPTER12OpticalDevices
12.0Preview
12.1OpticalAbsorption
12.2SolarCells
12.3Photodetectors
12.4Light-EmittingDiodes
12.5LaserDiodes
12.6Summary
Problems
APPENDIXASelectedListofSymbols
APPENDIXBSystemofUnits,ConversionFactors,andGeneralConstants
APPENDIXCUnitofEnergy—TheElectron-Volt
APPENDIXD“Derivation”andApplicationsofSchrodinger'sWaveEquation
Index...
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